Existence of Multistring Solutions of the Self-Gravitating Massive W−W-Boson

We consider a semilinear elliptic system which include the model system of the $W-$strings in the cosmology as a special case. We prove existence of multi-string solutions and obtain precise asymptotic decay estimates near infinity for the solutions. As a special case of this result we solve an open problem posed in \cite{yan}Comment: 12 page

On electron (anti)localization in graphene

We discuss localization properties of the Dirac-like electronic states in monolayers of graphite. In the framework of a general disorder model, we identify the conditions under which such standard localization effects as logarithmic temperature-dependent conductivity corrections appear to be strongly suppressed, as compared to the case of a two-dimensional electron gas with parabolic dispersion, in agreement with recent experimental observations.Comment: Latex, no figure

The structural, mechanical, electronic, optical and thermodynamic properties of t-X3_{3}As4_{4} (X == Si, Ge and Sn) by first-principles calculations

The structural, mechanical, electronic, optical and thermodynamic properties of the t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (X $=$ Si, Ge and Sn) with tetragonal structure have been investigated by first principles calculations. Our calculated results show that these compounds are mechanically and dynamically stable. By the study of elastic anisotropy, it is found that the anisotropic of the t-Sn$_{\mathrm{3}}$As$_{\mathrm{4}}$ is stronger than that of t-Si$_{\mathrm{3}}$As$_{\mathrm{4}}$ and t-Ge$_{\mathrm{3}}$As$_{\mathrm{4}}$. The band structures and density of states show that the t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (Si, Ge and Sn) are semiconductors with narrow band gaps. Based on the analyses of electron density difference, in t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ As atoms get electrons, X atoms lose electrons. The calculated static dielectric constants, $\varepsilon_{1} (0)$, are 15.5, 20.0 and 15.1 eV for t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ (X $=$ Si, Ge and Sn), respectively. The Dulong-Petit limit of t-X$_{\mathrm{3}}$As$_{\mathrm{4}}$ is about 10 J mol$^{\mathrm{-1}}$K$^{\mathrm{-1}}$. The thermodynamic stability successively decreases from t-Si$_{\mathrm{3}}$As$_{\mathrm{4}}$ to t-Ge$_{\mathrm{3}}$As$_{\mathrm{4}}$ to t-Sn$_{\mathrm{3}}$As$_{\mathrm{4}}$.Comment: 14 pages, 10 figures, 6 table